Premium
CMOS‐compatible fabrication of porous silicon gas sensors and their readout electronics on the same chip
Author(s) -
Barillaro G.,
Bruschi P.,
Pieri F.,
Strambini L. M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674370
Subject(s) - microelectronics , fabrication , electronics , cmos , porous silicon , chip , integrated circuit , silicon , materials science , electronic circuit , electrical engineering , optoelectronics , engineering , medicine , alternative medicine , pathology
In this work, integration on the same chip of porous silicon gas sensors along with their driving/readout electronic circuits by using an industrial microelectronic process is demonstrated. To ensure maximum compatibility, the porous silicon formation is performed after the integrated circuit fabrication flow is completed. The chip contains three CMOS operational amplifiers, a band‐gap voltage reference, an integrated temperature sensor and several porous silicon‐based NO 2 sensors. The simultaneous functionality of the electronics and the sensor is demonstrated by using various circuit blocks to implement a simple driving/readout electronic interface for the sensor. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)