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Influence of Pd layer on the sensitivity of CH x /PS/Si as structure for H 2 sensing
Author(s) -
Gabouze N.,
Cheraga H.,
Belhousse S.,
Ghellai N.,
Zouadi N.,
Ouadah Y.,
ChabaneSari N.E.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674368
Subject(s) - palladium , hydrogen , silicon , porous silicon , sensitivity (control systems) , materials science , hydrogen sensor , voltage , analytical chemistry (journal) , layer (electronics) , current (fluid) , optoelectronics , nanotechnology , chemistry , electrical engineering , electronic engineering , catalysis , organic chemistry , engineering
In this work, a hydrogen sensor based on Palladium/hydrocarbons (CH x )/Porous silicon/Silicon structure has been studied in presence of hydrogen gas. Current–voltage characterizations show that the sensitivity of the sensor is improved by more than two orders of magnitude compared with the uncoated CH x /PS/Si device. In addition, a rapid response time of the sensor of about 10 s is measured. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)