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Dynamics of photogenerated carriers in porous silicon probed by microwave absorption
Author(s) -
Porteanu H. E.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674341
Subject(s) - porous silicon , auger , microwave , absorption (acoustics) , silicon , chemical physics , materials science , porous medium , charge carrier , porosity , degenerate energy levels , chemistry , optoelectronics , nanotechnology , atomic physics , physics , composite material , quantum mechanics
We report on dynamics of photogenerated carriers in porous silicon using contactless investigation tools. A comparison of two theoretical models: the simple point charge description versus degenerate gas model is presented. The temperature dependence reveals the dominant role of surface states below 70 K. Light intensity dependences evidence Auger processes. The optical and chemical properties can be indirectly improved using the microwave conductivity by studying the surface states of porous materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)