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Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells
Author(s) -
Golaszewska K.,
Kamińska E.,
Piotrowska A.,
Rutkowski J.,
Kruszka R.,
Kowalczyk E.,
Papis E.,
Wawro A.,
Piotrowski T. T.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674149
Subject(s) - ohmic contact , materials science , optoelectronics , photodiode , sputtering , thin film , sputter deposition , photovoltaic system , oxide , nanotechnology , metallurgy , layer (electronics) , ecology , biology
In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO 4 used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO 4 were formed in a reactive process in Ar–O 2 atmosphere, from Cd and Ru 1 Si 1 targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO 4 transparent films instead of conventional metal‐based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D * increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)