Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells | Zendy

Golaszewska K. | Zendy; Kamińska E. | Zendy; Piotrowska A. | Zendy; Rutkowski J. | Zendy; Kruszka R. | Zendy; Kowalczyk E. | Zendy; Papis E. | Zendy; Wawro A. | Zendy; Piotrowski T. T. | Zendy

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Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells

Author(s) -

Golaszewska K.,

Kamińska E.,

Piotrowska A.,

Rutkowski J.,

Kruszka R.,

Kowalczyk E.,

Papis E.,

Wawro A.,

Piotrowski T. T.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200674149

Subject(s) - ohmic contact , materials science , optoelectronics , photodiode , sputtering , thin film , sputter deposition , photovoltaic system , oxide , nanotechnology , metallurgy , layer (electronics) , ecology , biology

In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO 4 used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO 4 were formed in a reactive process in Ar–O 2 atmosphere, from Cd and Ru 1 Si 1 targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO 4 transparent films instead of conventional metal‐based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D * increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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