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Ion beam synthesis of 4H‐(Si 1– x C 1– y )Ge x + y solid solutions
Author(s) -
Pezoldt J.,
Kups Th.,
Voelskow M.,
Skorupa W.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674122
Subject(s) - annealing (glass) , solid solution , ion , silicon , lattice (music) , materials science , ion implantation , silicon carbide , ion beam , carbide , crystallography , analytical chemistry (journal) , chemistry , metallurgy , physics , organic chemistry , chromatography , acoustics
Abstract 4H silicon carbide (Si 1– x C 1– y )Ge x + y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation with increasing implantation dose above 10%. The carried out rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and led to negligible change in the concentration profiles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)