Ion beam synthesis of 4H‐(Si 1– x   C 1– y   )Ge  x  + y    solid solutions | Zendy

Pezoldt J. | Zendy; Kups Th. | Zendy; Voelskow M. | Zendy; Skorupa W. | Zendy

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Ion beam synthesis of 4H‐(Si 1– x C 1– y )Ge x + y solid solutions

Author(s) -

Pezoldt J.,

Kups Th.,

Voelskow M.,

Skorupa W.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200674122

Subject(s) - annealing (glass) , solid solution , ion , silicon , lattice (music) , materials science , ion implantation , silicon carbide , ion beam , carbide , crystallography , analytical chemistry (journal) , chemistry , metallurgy , physics , organic chemistry , chromatography , acoustics

4H silicon carbide (Si 1– x C 1– y )Ge x + y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation with increasing implantation dose above 10%. The carried out rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and led to negligible change in the concentration profiles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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