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Photo‐ and electro‐reflectance spectroscopy of δ‐doped GaAs/AlAs multiple quantum well structures
Author(s) -
Čechavičius B.,
Kavaliauskas J.,
Krivaitė G.,
Valušis G.,
Seliuta D.,
Halsall M. P.,
Harrison P.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673959
Subject(s) - electric field , doping , terahertz radiation , spectroscopy , beryllium , quantum well , spectral line , condensed matter physics , materials science , chemistry , optoelectronics , atomic physics , molecular physics , optics , physics , laser , organic chemistry , quantum mechanics , astronomy
The photoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been used to study optical transitions, electronic structure and internal electric fields in beryllium δ‐doped GaAs/AlAs multiple quantum wells (MQWs) designed for terahertz sensors. QW widths ranged from 3 to 20 nm while doping densities varied from 2 × 10 10 to 2.5 × 10 12 cm –2 . From the Franz–Keldysh oscillations in PR and CER spectra the surface electric field strength was established. The optical spectra were found to exhibit excitonic behaviour up to acceptor density of 2.5 × 10 12 cm –2 . The origin of spectral features was identified on a basis of their dependence on optical bias and calculations of electronic structure under electric field. Modulation spectra of lightly doped samples were found to be dominated by symmetry‐allowed excitonic transitions while in highly doped samples additional features associated with symmetry forbidden transitions, coming into play due to internal electric field, were revealed. Selective detection of terahertz radiation by sensors based on the studied structures is demonstrated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)