Photoreflectance spectroscopy with nanometer spatial resolution under lateral current flow conditions in selectively doped heterostructures | Zendy

Lonskaya E. | Zendy; Ryabushkin O. | Zendy

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Photoreflectance spectroscopy with nanometer spatial resolution under lateral current flow conditions in selectively doped heterostructures

Author(s) -

Lonskaya E.,

Ryabushkin O.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200673952

Subject(s) - heterojunction , nanometre , current (fluid) , spectroscopy , materials science , current density , doping , image resolution , spatial distribution , spectral line , optoelectronics , transverse plane , high electron mobility transistor , optics , physics , transistor , voltage , engineering , structural engineering , quantum mechanics , astronomy , composite material , thermodynamics , statistics , mathematics

The simultaneous measurements of the photoreflectance spectra and I – V characteristics in GaAs/AlGaAs HEMT‐like structures allowed to determine the built‐in electric fields and a spatial dependence of the current density in direction transverse to heterostructure layers with nanometer spatial resolution. The variations of a spatial distribution of the current density with the lateral current were also investigated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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