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Photoreflectance spectroscopy with nanometer spatial resolution under lateral current flow conditions in selectively doped heterostructures
Author(s) -
Lonskaya E.,
Ryabushkin O.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673952
Subject(s) - heterojunction , nanometre , current (fluid) , spectroscopy , materials science , current density , doping , image resolution , spatial distribution , spectral line , optoelectronics , transverse plane , high electron mobility transistor , optics , physics , transistor , voltage , engineering , structural engineering , quantum mechanics , astronomy , composite material , thermodynamics , statistics , mathematics
The simultaneous measurements of the photoreflectance spectra and I – V characteristics in GaAs/AlGaAs HEMT‐like structures allowed to determine the built‐in electric fields and a spatial dependence of the current density in direction transverse to heterostructure layers with nanometer spatial resolution. The variations of a spatial distribution of the current density with the lateral current were also investigated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)