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Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
Author(s) -
Monemar B.,
Paskov P. P.,
Bergman J. P.,
Keller S.,
DenBaars S. P.,
Mishra U. K.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673581
Subject(s) - photoluminescence , quantum tunnelling , excitation , radiative transfer , quantum well , electron , materials science , condensed matter physics , band gap , spontaneous emission , chemistry , optoelectronics , physics , optics , laser , quantum mechanics
As an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide bandgap Al 0.95 In 0.05 N interlayer inside the QWs, in order to modify the potential and increase the electron–hole overlap. A strong reduction of the decay times of the photoluminescence (PL) was observed in this case at all temperatures up to 300 K, without a strong reduction in PL intensity. The tunneling electron–hole transition across the interlayer is observed to be dominant at room temperature for high excitation conditions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)