Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures | Zendy

Monemar B. | Zendy; Paskov P. P. | Zendy; Bergman J. P. | Zendy; Keller S. | Zendy; DenBaars S. P. | Zendy; Mishra U. K. | Zendy

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Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures

Author(s) -

Monemar B.,

Paskov P. P.,

Bergman J. P.,

Keller S.,

DenBaars S. P.,

Mishra U. K.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200673581

Subject(s) - photoluminescence , quantum tunnelling , excitation , radiative transfer , quantum well , electron , materials science , condensed matter physics , band gap , spontaneous emission , chemistry , optoelectronics , physics , optics , laser , quantum mechanics

As an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide bandgap Al 0.95 In 0.05 N interlayer inside the QWs, in order to modify the potential and increase the electron–hole overlap. A strong reduction of the decay times of the photoluminescence (PL) was observed in this case at all temperatures up to 300 K, without a strong reduction in PL intensity. The tunneling electron–hole transition across the interlayer is observed to be dominant at room temperature for high excitation conditions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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