Structural analysis of ELO‐GaN grown on a sapphire substrate as the underlying layer of a GaN‐based laser diode | Zendy

Miyajima Takao | Zendy; Takeda Shingo | Zendy; Tsusaka Yoshiyuki | Zendy; Matsui Junji | Zendy; Kudo Yoshihiro | Zendy; Tomiya Shigetaka | Zendy; Hino Tomonori | Zendy; Goto Shu | Zendy; Ikeda Masao | Zendy; Narui Hironobu | Zendy

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Structural analysis of ELO‐GaN grown on a sapphire substrate as the underlying layer of a GaN‐based laser diode

Author(s) -

Miyajima Takao,

Takeda Shingo,

Tsusaka Yoshiyuki,

Matsui Junji,

Kudo Yoshihiro,

Tomiya Shigetaka,

Hino Tomonori,

Goto Shu,

Ikeda Masao,

Narui Hironobu

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200673568

Subject(s) - materials science , sapphire , optoelectronics , epitaxy , diode , laser , coalescence (physics) , diffraction , layer (electronics) , substrate (aquarium) , light emitting diode , optics , laser diode , molecular beam epitaxy , nanotechnology , physics , geology , oceanography , astrobiology

Using micro‐beam X‐ray diffraction (XRD), small c ‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable underlying layer for realizing a reliable GaN‐based blue‐violet laser diode. By analyzing the micro‐scale structure of ELO‐GaN without coalescence and the ambient‐temperature dependence of the tilting angle, we conclude that the small c ‐axis tilting is caused by compressive stress in the seed region of ELO‐GaN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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