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Structural analysis of ELO‐GaN grown on a sapphire substrate as the underlying layer of a GaN‐based laser diode
Author(s) -
Miyajima Takao,
Takeda Shingo,
Tsusaka Yoshiyuki,
Matsui Junji,
Kudo Yoshihiro,
Tomiya Shigetaka,
Hino Tomonori,
Goto Shu,
Ikeda Masao,
Narui Hironobu
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673568
Subject(s) - materials science , sapphire , optoelectronics , epitaxy , diode , laser , coalescence (physics) , diffraction , layer (electronics) , substrate (aquarium) , light emitting diode , optics , laser diode , molecular beam epitaxy , nanotechnology , physics , geology , oceanography , astrobiology
Using micro‐beam X‐ray diffraction (XRD), small c ‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable underlying layer for realizing a reliable GaN‐based blue‐violet laser diode. By analyzing the micro‐scale structure of ELO‐GaN without coalescence and the ambient‐temperature dependence of the tilting angle, we conclude that the small c ‐axis tilting is caused by compressive stress in the seed region of ELO‐GaN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)