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The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy
Author(s) -
Hori Y.,
Andreev T.,
BelletAmalric E.,
Oda O.,
Le Si Dang D.,
Daudin B.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673542
Subject(s) - molecular beam epitaxy , quantum dot , doping , materials science , plasma , relaxation (psychology) , condensed matter physics , layer (electronics) , analytical chemistry (journal) , epitaxy , chemistry , optoelectronics , nanotechnology , physics , psychology , social psychology , quantum mechanics , chromatography
Abstract We report on the self organized growth of GaN quantum dots deposited on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al x Ga 1– x N layer on AlN depends on Al composition and thickness. The measurement of the variation of lattice parameter indicated that GaN quantum dots do not relax completely on Al x Ga 1– x N layer. Optical properties of undoped and Eu‐doped quantum dots on AlGaN layer were studied. Visible light emission from Eu 3+ ions has been observed and showed strong thermal stability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)