The growth and rare‐earth doping of GaN quantum dots on Al  x   Ga 1– x   N layer by plasma‐assisted molecular beam epitaxy | Zendy

Hori Y. | Zendy; Andreev T. | Zendy; BelletAmalric E. | Zendy; Oda O. | Zendy; Le Si Dang D. | Zendy; Daudin B. | Zendy

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The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy

Author(s) -

Hori Y.,

Andreev T.,

BelletAmalric E.,

Oda O.,

Le Si Dang D.,

Daudin B.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200673542

Subject(s) - molecular beam epitaxy , quantum dot , doping , materials science , plasma , relaxation (psychology) , condensed matter physics , layer (electronics) , analytical chemistry (journal) , epitaxy , chemistry , optoelectronics , nanotechnology , physics , psychology , social psychology , quantum mechanics , chromatography

We report on the self organized growth of GaN quantum dots deposited on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al x Ga 1– x N layer on AlN depends on Al composition and thickness. The measurement of the variation of lattice parameter indicated that GaN quantum dots do not relax completely on Al x Ga 1– x N layer. Optical properties of undoped and Eu‐doped quantum dots on AlGaN layer were studied. Visible light emission from Eu 3+ ions has been observed and showed strong thermal stability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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