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Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
Author(s) -
Jahn Uwe,
Jiang DeSheng,
Ploog Klaus H.,
Wang Xiaolan,
Zhao Degang,
Yang Hui
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673538
Subject(s) - nucleation , metalorganic vapour phase epitaxy , luminescence , materials science , layer (electronics) , photoluminescence , crystallography , mineralogy , chemical physics , chemistry , nanotechnology , optoelectronics , epitaxy , organic chemistry
For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (Al,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain‐like growth is observed with a pyramidal surface morphology and non‐radiative recombination within the domain boundaries. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)