z-logo
Premium
Hybrid ZnO/III‐nitride light‐emitting diodes: modelling analysis of operation
Author(s) -
Bulashevich K. A.,
Evstratov I. Yu.,
Karpov S. Yu.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673501
Subject(s) - light emitting diode , heterojunction , optoelectronics , diode , nitride , materials science , quantum efficiency , quantum , nanotechnology , physics , quantum mechanics , layer (electronics)
Using simulations, we have analysed basic mechanisms of hybrid II–O/III–N light‐emitting diode operation. Factors largely affecting the internal quantum efficiency of hybrid single‐ and double heterostructures, including operation temperature, are examined in detail. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom