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The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance
Author(s) -
Kudrawiec R.,
Yuen H. B.,
Bank S. R.,
Bae H. P.,
Wistey M. A.,
Harris James S.,
Motyka M.,
Gladysiewicz M.,
Misiewicz J.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673291
Subject(s) - antimony , quantum well , optoelectronics , materials science , resonance (particle physics) , quality (philosophy) , gallium arsenide , optics , physics , laser , atomic physics , metallurgy , quantum mechanics
Contactless electroreflectance (CER) has been applied to study the influence of Sb atoms on the optical quality of highly strained GaInNAs/GaAs quantum wells (QWs). A set of QWs grown under various antimony fluxes has been analyzed in this work. The broadening of the CER resonance has been used as an indicator of the QW quality. It has been observed that broadening of the CER resonance related to the ground state transition decreases about three times (from ∼60 meV to 20 meV) after the incorporation of antimony into GaInNAs/GaAs QWs. Moreover, it has been observed that the broadening parameter does not decrease with the rise of antimony content from 0.5% to 2.0%. It means that only 0.5% Sb is enough to improve the optical quality of GaInNAs/GaAs QWs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)