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Synthesis of localized 2D‐layers of silicon nanoparticles embedded in a SiO 2 layer by a stencil‐masked ultra‐low energy ion implantation process
Author(s) -
Dumas C.,
Grisolia J.,
Ressier L.,
Arbouet A.,
Paillard V.,
Ben Assayag G.,
Claverie A.,
van den Boogaart M. A. F.,
Brugger J.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200673232
Subject(s) - stencil , materials science , silicon , annealing (glass) , optoelectronics , nanoparticle , ion , ion implantation , layer (electronics) , photoluminescence , nanotechnology , composite material , chemistry , computer science , computational science , organic chemistry
We propose an original approach called “stencil‐masked ion implantation process” to perform a spatially localized synthesis of a limited number of Si nanoparticles (nps) within a thin SiO 2 layer. This process consists in implanting silicon ions at ultra‐low energy through a stencil mask containing a periodic array of opened windows (from 50 nm to 2 µm). After the stencil removal, a thermal annealing is used to synthesize small and spherical embedded nps. AFM observations show that the stencil windows are perfectly transferred into the substrate without any clogging or blurring effect. The samples exhibit a 3 nm localized swelling of the regions rich in Si nps. Moreover, photoluminescence (PL) spectroscopy shows that due to the quantum confinement only the implanted regions containing the Si nps are emitting light. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)