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Thick single crystal CVD diamond prepared from CH 4 ‐rich mixtures
Author(s) -
Bogdan G.,
De Corte K.,
Deferme W.,
Haenen K.,
Nesládek M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200671128
Subject(s) - materials science , diamond , monocrystalline silicon , chemical vapor deposition , polishing , substrate (aquarium) , layer (electronics) , nanotechnology , nanometre , crystal (programming language) , single crystal , impurity , optoelectronics , chemical engineering , composite material , silicon , crystallography , chemistry , oceanography , organic chemistry , geology , computer science , engineering , programming language
Recent interests in freestanding single‐crystal CVD diamond (SC‐CVD) discs for several applications in electronics led to an intense study of SC‐CVD layer growth and properties. In this work we have investigated the growth mechanism of monocrystalline CVD diamond films with surfaces smooth in nanometer scale taking into account the defect incorporation in the SC‐CVD layers. Specifically we discuss the surface structure characteristics for these conditions as studied with high‐resolution AFM mapping. The as‐grown CVD layers were removed from the substrate by laser cutting, followed by a polishing step, yielding freestanding plates. Subsequently, microscopic and colour studies as well as infrared absorption spectroscopy were performed. These investigations revealed the presence of several characteristic defects and impurities. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)