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Electrical characteristics of n‐type diamond Schottky diodes and metal/diamond interfaces
Author(s) -
Suzuki Mariko,
Koizumi Satoshi,
Katagiri Masayuki,
Ono Tomio,
Sakuma Naoshi,
Yoshida Hiroaki,
Sakai Tadashi,
Uchikoga Shuichi
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200671124
Subject(s) - schottky diode , diamond , materials science , diode , rectification , schottky barrier , optoelectronics , analytical chemistry (journal) , metal , capacitance , doping , chemistry , electrode , voltage , metallurgy , electrical engineering , chromatography , engineering
Electrical characteristics of n‐type diamond Schottky diodes and metal/diamond interfaces have been systematically investigated for phosphorus (P)‐doped homoepitaxial diamond layers. The current–voltage ( I–V ) characteristics of the Ni/n‐type diamond Schottky diode show excellent rectification properties from 297 K to 773 K. The ideality factor and the rectification ratio were 1.0 and ∼10 6 at +10 V at 573 K, respectively. The rectifying properties deteriorated with increasing P concentration in the diamond layers. Temperature‐dependent capacitance–frequency ( C–f ) and conductance–frequency ( G–f ) measurements on the Schottky diodes have shown that the capacitance is reduced at high frequency due to the inability of deep centers to maintain an equilibrium ionization state under a high‐frequency modulation. C–V measurements deduced that the P electrical activity (the ratio of the net donor concentration to the P concentration) was nearly 1 from low concentration (1.6 × 10 16 cm –3 ) to high concentration (2.7 × 10 18 cm –3 ) of P. The Schottky barrier height was found to be almost constant at ∼4.3 eV independent of the metal work function (Ni, Pt, Al and Ti). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)