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Photoelastic constants in diamond and silicon
Author(s) -
Hounsome L. S.,
Jones R.,
Shaw M. J.,
Briddon P. R.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200671121
Subject(s) - diamond , silicon , ab initio , strain (injury) , materials science , dielectric , atom (system on chip) , ultimate tensile strength , density functional theory , computational chemistry , thermodynamics , condensed matter physics , molecular physics , crystallography , atomic physics , chemistry , composite material , physics , metallurgy , optoelectronics , organic chemistry , medicine , computer science , embedded system
Abstract Ab Initio calculations, using density functional theory within the AIMPRO code, have been performed on bulk diamond and silicon in order to calculate the change in the dielectric constant due to strain, and hence the values of the photoelastic tensors. A combination of compressive and tensile strain has been applied to two atom unit cells of Si and diamond and the tensors relating to p 11 + 2 p 12 , p 12 – 2 p 11 and p 44 extracted. Good agreement is found with experimental results for absolute values and frequency dependence of the constants for silicon. Results are also given for diamond where experimental data is much more limited and scattered. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)