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n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation
Author(s) -
Kociniewski T.,
Barjon J.,
Pinault M.A.,
Jomard F.,
Lusson A.,
Ballutaud D.,
Gorochov O.,
Laroche J. M.,
Rzepka E.,
Chevallier J.,
Saguy C.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200671113
Subject(s) - dopant , metalorganic vapour phase epitaxy , chemical vapor deposition , phosphine , diamond , phosphorus , doping , inorganic chemistry , chemistry , materials science , nanotechnology , organic chemistry , optoelectronics , epitaxy , catalysis , layer (electronics)
Until now, phosphorus is the best substitutional dopant for n‐type diamond. Its incorporation is usually achieved using phosphine gas. However, organic precursors of phosphorus have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphine. In this report, we investigate the n‐type doping of diamond with liquid TBP using the metal‐organic chemical vapour deposition (MOCVD) technology for dopant incorporation. Our first results with liquid TBP precursor are compared with the results published for gaseous organic precursors of phosphorus. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)