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Epitaxial growth and optical investigations of ZnTeO alloys
Author(s) -
Nabetani Y.,
Okuno T.,
Aoki K.,
Kato T.,
Matsumoto T.,
Hirai T.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669647
Subject(s) - molecular beam epitaxy , lattice constant , epitaxy , conduction band , alloy , spectroscopy , band gap , diffraction , semiconductor , excited state , chemistry , materials science , analytical chemistry (journal) , condensed matter physics , crystallography , atomic physics , optoelectronics , optics , nanotechnology , metallurgy , physics , layer (electronics) , quantum mechanics , chromatography , electron
We have grown zincblende‐structured ZnTeO alloy semiconductors on GaAs substrates by molecular beam epitaxy using RF‐excited O. O concentrations measured by secondary ion mass spectroscopy were found to increase with the increase of O 2 flow rate supplied during the growth, while the change of lattice constant measured by X‐ray diffraction does not follow Vegard's law. It is considered that the O atoms are incorporated not only into group‐VI sites but also as interstitials. Formation of other compounds such as ZnTeO 3 , Zn 2 Te 3 O 8 , and TeO 2 was not detected. Optical reflectance spectroscopy revealed the increase of the band‐gap energy with O concentration that can be interpreted as the repulsive interaction between the energy states originated in the localized states of O and the conduction‐band edge of host ZnTe. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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