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Growth of high‐quality CuGaSe 2 thin films using ionized Ga precursor
Author(s) -
Miyazaki H.,
Miyake T.,
Chiba Y.,
Yamada A.,
Konagai M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669640
Subject(s) - crystallinity , scanning electron microscope , raman spectroscopy , thin film , materials science , crystal (programming language) , crystal growth , diffraction , crystallography , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , optics , composite material , chromatography , physics , programming language , computer science , engineering
We have fabricated high‐quality CuGaSe 2 thin films using ionized Ga precursors. The films were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The grain size and the crystallinity of CuGaSe 2 films using ionized Ga precursors were larger than those of the films using unionized Ga precursors. It was found from the experiments that the migration energy of Ga precursors played an important role in the crystal growth for high‐quality CuGaSe 2 films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)