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Helicon‐wave‐excited plasma sputtering deposition of Ga‐doped ZnO transparent conducting films
Author(s) -
Sugiyama Mutsumi,
Murayama Akira,
Imao Takashi,
Saiki Keita,
Nakanishi Hisayuki,
Chichibu Shigefusa F.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669616
Subject(s) - helicon , sputtering , materials science , doping , thin film , deposition (geology) , transmittance , excited state , plasma , sputter deposition , analytical chemistry (journal) , optoelectronics , wavelength , nanotechnology , chemistry , atomic physics , paleontology , physics , quantum mechanics , sediment , chromatography , biology
Sputtering deposition of Ga‐doped ZnO (ZnO:Ga) thin films was carried out using the helicon‐wave‐excited plasma sputtering (HWPS) method. The films sputtered above 150 °C had a preferential {0001} orientation. According to the surface‐damage‐free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250 °C, the electron mobility was limited to as low as 2–3 cm 2 /V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)