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Microstructures and MR effects of transparent ferromagnetic chemically prepared Fe–Zn–O films
Author(s) -
Shinagawa T.,
Izaki M.,
Inui H.,
Murase K.,
Awakura Y.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669600
Subject(s) - coercivity , materials science , ferromagnetism , magnetoresistance , hysteresis , spinel , hall effect , condensed matter physics , microstructure , wurtzite crystal structure , magnetic hysteresis , electrical resistivity and conductivity , oxide , zinc , analytical chemistry (journal) , magnetization , magnetic field , metallurgy , chemistry , physics , engineering , chromatography , quantum mechanics , electrical engineering
Transparent ferromagnetic Fe–Zn–O films with an entire oxide system were prepared by chemical bath depositions followed by heat treatment. The Fe–Zn–O film was composed of two phases, where spinel‐type iron oxide particles of 20 nm in diameter were embedded in a wurtzite zinc oxide film with 240 nm thickness. The electrical properties evaluated by a Hall effects measuring system revealed that the film is an n‐type semiconductor with a resistivity of 2.6 Ω cm. The Fe–Zn–O film exhibited magnetic hysteresis at room temperature, and magnetic moment of 0.5 μ B /Fe and coercive force of 172.5 Oe were observed. A negative magnetoresistance effect, probably due to a spin‐dependent scattering of carrier electrons, of about −0.35% in a 5 kOe magnetic field was detected at room temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)