MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation | Zendy

Asubar J. T. | Zendy; Sato S. | Zendy; Jinbo Y. | Zendy; Uchitomi N. | Zendy

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MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation

Author(s) -

Asubar J. T.,

Sato S.,

Jinbo Y.,

Uchitomi N.

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200669582

Subject(s) - molecular beam epitaxy , epitaxy , curie temperature , acceptor , materials science , metal , transition metal , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , ferromagnetism , metallurgy , catalysis , physics , organic chemistry , layer (electronics)

GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied by decreasing Curie temperature T C and transition towards metallic behavior of the epitaxial film properties with increasing level of Zn incorporation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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