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MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation
Author(s) -
Asubar J. T.,
Sato S.,
Jinbo Y.,
Uchitomi N.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669582
Subject(s) - molecular beam epitaxy , epitaxy , curie temperature , acceptor , materials science , metal , transition metal , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , ferromagnetism , metallurgy , catalysis , physics , organic chemistry , layer (electronics)
GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied by decreasing Curie temperature T C and transition towards metallic behavior of the epitaxial film properties with increasing level of Zn incorporation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)