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In x Ga 1– x As single crystal growth by dispersing local misfit stress
Author(s) -
Miyata Hiroaki,
Adachi Satoshi,
Ogata Yasuyuki,
Tsuru Tetsuya,
Muramatsu Yuji,
Kinoshita Kyoichi,
Odawara Osamu,
Yoda Shinichi
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669567
Subject(s) - ternary operation , full width at half maximum , materials science , crystal (programming language) , gallium arsenide , crystal growth , homogeneity (statistics) , crystallography , indium , single crystal , indium arsenide , stress (linguistics) , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , physics , linguistics , statistics , mathematics , philosophy , chromatography , computer science , programming language
We succeeded in growing a single crystal by dispersing the misfit stress around an initial solid‐liquid interface in In 0.3 Ga 0.7 As ternary bulk crystal growth. We gradually increased concentration of indium arsenide so that the local misfit stress could be smaller than critical resolved shear stress. The traveling lqiuidus‐zone (TLZ) method was applied for growing crystals. To grow a single In 0.3 Ga 0.7 As crystal, an In 0.1 Ga 0.9 As single crystal region was grown first on a GaAs seed. Then the concentration of indium arsenide was gradually increased up to In 0.3 Ga 0.7 As by lowering temperature at the interface. As a result, In 0.3 Ga 0.7 As single crystals of 2 mm in thickness, 10 mm in width and more than 25 mm in length were successfully obtained. Mean value of full width half maximum (FWHM) of X‐ray rocking curves in the In 0.3 Ga 0.7 As grown crystal was 0.116°. It is not small enough but it will be improved by increasing compositional homogeneity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)