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Characterization of Cu(In,Ga) (S,Se) 2 thin films prepared by sequential evaporation from ternary compounds
Author(s) -
Yamaguchi T.,
Hatori M.,
Niiyama S.,
Miyake Y.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200669551
Subject(s) - thin film , chalcopyrite , electron microprobe , ternary operation , evaporation , analytical chemistry (journal) , materials science , ternary compound , crystallography , chemistry , metallurgy , copper , nanotechnology , inorganic chemistry , physics , chromatography , computer science , thermodynamics , programming language
Cu(In,Ga) (S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ] + [CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S + Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga) (S,Se) 2 thin films had large and columnar grains. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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