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Micro‐Raman study of strain fields around dislocations in GaAs
Author(s) -
Irmer G.,
Jurisch M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200623041
Subject(s) - dislocation , materials science , wafer , raman spectroscopy , microelectronics , condensed matter physics , semiconductor , strain (injury) , stress (linguistics) , phonon , enhanced data rates for gsm evolution , residual stress , optics , optoelectronics , composite material , physics , medicine , telecommunications , linguistics , philosophy , computer science
The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)