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Fabrication and characterization of orientated grown AlN films sputtered at room temperature
Author(s) -
Gao X. D.,
Jiang E. Y.,
Liu H. H.,
Li G. K.,
Mi W. B.,
Li Z. Q.,
Wu P.,
Bai H. L.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200623009
Subject(s) - materials science , substrate (aquarium) , refractive index , fabrication , diffraction , impurity , analytical chemistry (journal) , absorption (acoustics) , sputter deposition , band gap , sputtering , oxygen , absorption spectroscopy , nitrogen , characterization (materials science) , absorption edge , optoelectronics , thin film , optics , chemistry , nanotechnology , composite material , medicine , oceanography , alternative medicine , physics , organic chemistry , pathology , chromatography , geology
AlN films have been fabricated using a dc magnetron sputtering system under different N 2 partial pressures, P N , without substrate heating. X‐ray diffraction revealed that the AlN(002) peak intensity increases first with increasing P N (10–40%) and then drops when P N is increased to 50%. Optical transmission studies derived the refractive index of 1.84–1.91 and the optical band gap of 5.83–5.91 eV. Strong absorption caused by the oxygen impurities and nitrogen vacancies was observed in the transmission spectrum of the sample fabricated under P N of 10%. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)