Premium
Thermoelectric properties of p‐type higher manganese silicide films prepared by solid phase reaction and reactive deposition
Author(s) -
Hou Q. R.,
Zhao W.,
Chen Y. B.,
Liang D.,
Feng X.,
Zhang H. Y.,
He Y. J.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622588
Subject(s) - seebeck coefficient , silicon , materials science , silicide , electrical resistivity and conductivity , manganese , analytical chemistry (journal) , thermoelectric effect , substrate (aquarium) , atmospheric temperature range , deposition (geology) , evaporation , phase (matter) , thermal conductivity , metallurgy , chemistry , composite material , paleontology , physics , oceanography , chromatography , sediment , geology , meteorology , biology , electrical engineering , thermodynamics , engineering , organic chemistry
Higher manganese silicide (MnSi 1.7 ) films are prepared on silicon and thermally oxidized silicon substrates by reactive deposition and solid phase reaction. By co‐evaporation of manganese and silicon atoms on silicon substrate at about 400 °C, a sharp film‐substrate interface is obtained. For preparation of the films on thermally oxidized silicon substrates by solid phase reaction, the oxygen level in the films is found to be dependent on the deposition rate of silicon. The oxygen and manganese atoms accumulate at the silicide‐Si interface and film‐SiO 2 interface, respectively. The sign of the Seebeck coefficient is positive in the temperature range 300 K to 773 K, indicating the p‐type conductivity of the films. The Seebeck coefficient increases with increasing temperature from 294 K to 483 K and is weakly temperature dependent above 483 K. The resistivity increases with temperature near room temperature, reaches a maximum value at about 383 K, and then decreases with further increase of the temperature. The Seebeck coefficient and resistivity at room temperature are about 114 μV/K and 7.37 × 10 –3 Ω cm, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)