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Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions
Author(s) -
Mosca M.,
Nicolay S.,
Feltin E.,
Carlin J.F.,
Butté R.,
Ilegems M.,
Grandjean N.,
Tchernycheva M.,
Nevou L.,
Julien F. H.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622483
Subject(s) - indium , metalorganic vapour phase epitaxy , heterojunction , chemical vapor deposition , materials science , optoelectronics , nitride , indium nitride , quantum well , infrared , wavelength , nanotechnology , epitaxy , optics , physics , laser , layer (electronics)
Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)