Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions | Zendy

Mosca M. | Zendy; Nicolay S. | Zendy; Feltin E. | Zendy; Carlin J.F. | Zendy; Butté R. | Zendy; Ilegems M. | Zendy; Grandjean N. | Zendy; Tchernycheva M. | Zendy; Nevou L. | Zendy; Julien F. H. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions

Author(s) -

Mosca M.,

Nicolay S.,

Feltin E.,

Carlin J.F.,

Butté R.,

Ilegems M.,

Grandjean N.,

Tchernycheva M.,

Nevou L.,

Julien F. H.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200622483

Subject(s) - indium , metalorganic vapour phase epitaxy , heterojunction , chemical vapor deposition , materials science , optoelectronics , nitride , indium nitride , quantum well , infrared , wavelength , nanotechnology , epitaxy , optics , physics , laser , layer (electronics)

Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research