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Surface photovoltaic effect in CdTe as influenced by recombination in the space‐charge region
Author(s) -
Toušek J.,
Toušková J.,
Belas E.,
Votoček L.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622462
Subject(s) - surface photovoltage , recombination , diffusion , cadmium telluride photovoltaics , wafer , photovoltaic system , charge carrier , depletion region , space charge , electric field , materials science , photovoltaic effect , carrier lifetime , charge (physics) , optoelectronics , analytical chemistry (journal) , molecular physics , chemistry , semiconductor , silicon , physics , electrical engineering , thermodynamics , electron , spectroscopy , biochemistry , chromatography , quantum mechanics , gene , engineering
Diffusion length of minority carriers in CdTe wafers was measured by the surface photovoltage (SPV) method. A model including recombination in the space‐charge region (SCR) is presented to explain the SPV spectra. Assuming a thick neutral bulk and an electric field only in the SCR, five parameters are needed for characterization of the system. On analyzing the problem we have found that the most important of them – the diffusion length of minority carriers L – is not influenced by recombination in the SCR. The results are verified on samples with different resistivities, and extracted diffusion length is compared with literature data. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)