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Optical microscopy imaging method for detection of electromigration: Theory and experiment
Author(s) -
Li L. H.,
Dasika V.,
Heskett D.,
Tang W. H.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622455
Subject(s) - electromigration , interconnection , microscopy , materials science , optical microscope , diffusion , electric field , optoelectronics , nanotechnology , optics , computer science , composite material , scanning electron microscope , physics , computer network , quantum mechanics , thermodynamics
Electromigration is a microscopic phenomenon involving electric field‐induced diffusion, which is very relevant to damage in interconnects. A common method to monitor interconnect degradation is through electrical resistance measurements, which requires direct electrical contacts. It is desirable to develop non‐contact methods to monitor electromigration damage formation. Recently, we have proposed a novel Optical Microscopy Imaging Method (OMIM). Here we provide theoretical proof and additional experimental results. OMIM provides a new method for studying electromigration‐induced damage. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)