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Comment on “Transport Properties of Tl 5 Te 3 Single Crystals” [phys. stat. sol. (a) Vol. 191, No. 1, 322–329 (2002)]
Author(s) -
Cankurtaran M.,
Çelik H.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622449
Subject(s) - effective mass (spring–mass system) , hall effect , seebeck coefficient , electron , semiconductor , condensed matter physics , analytical chemistry (journal) , charge carrier , electron mobility , thermoelectric effect , conductivity , electrical resistivity and conductivity , materials science , physics , chemistry , thermodynamics , quantum mechanics , chromatography
Recently, Gamal et al. [phys. stat. sol. (a) 191 , 322 (2002)] reported the results of electrical conductivity, Hall effect and thermoelectric power (TEP) measurements on Tl 5 Te 3 single crystals. The samples used in the study were p‐type semiconductors. From the experimental data for the temperature dependence of TEP, Gamal et al. determined the values of 1.6 × 10 –41 kg and 1.5 × 10 –40 kg, respectively, for the effective masses of electrons and holes in p‐type Tl 5 Te 3 , which are about ten orders of magnitude smaller than the free electron mass, 9.11 × 10 –31 kg. We argue that the anomalously small values obtained for the effective mass of charge carriers in Tl 5 Te 3 have no physical significance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)