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Red luminescence from freestanding GaN grown on LiAlO 2 substrate by hydride vapor phase epitaxy
Author(s) -
Wang Lijun,
Richter E.,
Weyers M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622409
Subject(s) - luminescence , epitaxy , photoluminescence , hydride , substrate (aquarium) , analytical chemistry (journal) , impurity , materials science , acceptor , chemistry , optoelectronics , hydrogen , nanotechnology , condensed matter physics , oceanography , physics , organic chemistry , layer (electronics) , chromatography , geology
Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO 2 substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐dependent PL data show that the 1.78 eV red band is due to a donor‐acceptor pair (DAP) transition. Excitation‐intensity‐dependent PL measurements at 10 K and 300 K reveal that the 1.85 eV band at 300 K is the overlap of the DAP band and the electron‐to‐acceptor (e, A 0 ) transition band. Ion‐implantation experiments confirmed that both carbon and oxygen impurities are involved in the red luminescence transition. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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