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Temperature dependence of the photocurrent excited above the fundamental absorption edge of PbWO 4
Author(s) -
Itoh Chihiro,
Kigoshi Satohiro
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622374
Subject(s) - photocurrent , excited state , absorption edge , excitation , atmospheric temperature range , chemistry , photoconductivity , materials science , atomic physics , analytical chemistry (journal) , band gap , optoelectronics , physics , quantum mechanics , chromatography , meteorology
Photocurrent of lead tungstate (PbWO 4 ) single crystals has been studied in the temperature range from 4 K to 270 K. The excitation spectrum of the photocurrent characterized by a prominent peak at 4.1 eV and a rise above 4.5 eV was obtained at 270 K. Below 150 K, the photocurrents excited at 4.15 eV and 4.7 eV show analogous temperature dependence with each others. However, the photocurrent excited at 4.15 eV exhibits thermal activation type temperature dependence above 150 K. We find that the photocurrent showing thermal activation is induced efficiently by the excitation at 4.12 eV, but by neither the excitonic transition nor the band‐to‐band transition. The temperature dependence of the photocurrent is discussed in terms of temperature dependence of the mobility and the carrier density. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)