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Magnetotransport characterization of AlGaN/GaN interfaces
Author(s) -
Tauk R.,
Tiberj A.,
Lorenzini P.,
Bougrioua Z.,
Azize M.,
Sakowicz M.,
Karpierz K.,
Knap W.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622330
Subject(s) - heterojunction , sapphire , quantum well , condensed matter physics , materials science , scattering , epitaxy , optoelectronics , shubnikov–de haas effect , charge carrier density , electron mobility , doping , nanotechnology , physics , quantum oscillations , optics , layer (electronics) , fermi surface , laser , superconductivity
Magnetotransport studies of high quality AlGaN/GaN heterojunctions are reported. The transport and quantum lifetimes were respectively deduced from low temperature mobility and Shubnikov de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy grown AlGaN/GaN/sapphire heterostructures. It is found that contrary to theoretical predictions both quantum and transport lifetimes have the same bell shape behavior versus carrier density. We determined experimental ratio of quantum to transport lifetime varying from 9 to 16 for carrier densities in 1–9 × 10 12 cm –2 range. We show that the quantum lifetime is very sensitive to interface scattering at high carrier density. Therefore, our work shows how Shubnikov de Haas experiments can be used to characterize the quality of AlGaN/GaN interfaces used in modern light emitting devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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