Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures | Zendy

Wartak M. S. | Zendy; Weetman P. | Zendy

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Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

Author(s) -

Wartak M. S.,

Weetman P.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200622318

Subject(s) - laser linewidth , differential gain , hamiltonian (control theory) , spectral line , charge carrier density , quantum well , materials science , differential (mechanical device) , density matrix , quantum , condensed matter physics , physics , optoelectronics , mathematics , quantum mechanics , thermodynamics , laser , mathematical optimization , doping

The differential gain and linewidth enhancement factor ( α ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band k · p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is applied. It is shown that spectra of differential gain and α ‐factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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