Premium
Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures
Author(s) -
Wartak M. S.,
Weetman P.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622318
Subject(s) - laser linewidth , differential gain , hamiltonian (control theory) , spectral line , charge carrier density , quantum well , materials science , differential (mechanical device) , density matrix , quantum , condensed matter physics , physics , optoelectronics , mathematics , quantum mechanics , thermodynamics , laser , mathematical optimization , doping
The differential gain and linewidth enhancement factor ( α ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band k · p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is applied. It is shown that spectra of differential gain and α ‐factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)