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Estimation of screened plasma resonance frequencies of a layered semiconductor using a single oblique incidence reflectance spectrum
Author(s) -
Foltin O.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622303
Subject(s) - specular reflection , plane of incidence , optics , semiconductor , reflection (computer programming) , reflectivity , resonance (particle physics) , incidence (geometry) , materials science , physics , optoelectronics , atomic physics , plane wave , computer science , programming language
Abstract The second derivative of a simulated oblique incidence specular reflectance spectrum of infrared radiation, polarized parallel to the plane of incidence, shows the possibility of estimating the values of two screened plasma resonance frequencies of an optically uniaxial semiconductor by knowledge of a single spectrum. The use of a basal plane reflection surface enables us, in a case of a layered semiconductor, to avoid a troublesome production and a poor spectroscopic quality of the reflection surface oriented normal to the easy cleavage plane, otherwise needed for one of the normal incidence reflectance measurements. For the calculations the parameters of a Bi 2 Se 3 crystal were used. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)