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Electrical properties of CuGaSe 2 single crystals and polycrystalline coevaporated thin films
Author(s) -
Amara A.,
Rezaiki W.,
Ferdi A.,
Hendaoui A.,
Drici A.,
Guerioune M.,
Bernède J. C.,
Morsli M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622259
Subject(s) - crystallite , grain boundary , materials science , thin film , single crystal , electrical resistivity and conductivity , condensed matter physics , valence (chemistry) , scattering , analytical chemistry (journal) , chemistry , crystallography , optics , nanotechnology , microstructure , composite material , engineering , organic chemistry , physics , chromatography , electrical engineering
CuGaSe 2 single crystals were grown by iodine vapour transport method, whereas polycrystalline thin films were obtained by coevaporation technique from three sources. The variation of the hole concentration with temperature of CuGaSe 2 single crystal in the high temperature region is interpreted assuming thermal activation in the valence band. The density of states effective mass of the holes is deduced. Acceptor and donor concentrations as well as their compensation ratio are reported. The temperature dependence of the hole mobility in valence band is analysed by taking into account several scattering mechanisms of the charge carriers. To account for the temperature dependant conductivity of polycrystalline CuGaSe 2 thin film, grain boundary conduction process was suggested. Quantitative values of the mean potential barrier height at grain boundaries and the standard deviation are reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)