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Electrical and optical properties of ZnO films deposited by ECR‐PECVD
Author(s) -
Choi S. Y.,
Kang M. J.,
Park T. J.,
Tap R.,
Schoemaker S.,
WillertPorada M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622256
Subject(s) - plasma enhanced chemical vapor deposition , biasing , materials science , thin film , electron cyclotron resonance , transmittance , substrate (aquarium) , band gap , sheet resistance , chemical vapor deposition , optoelectronics , plasma , deposition (geology) , voltage , analytical chemistry (journal) , chemistry , nanotechnology , electrical engineering , layer (electronics) , physics , paleontology , oceanography , quantum mechanics , chromatography , sediment , geology , biology , engineering
The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasma‐enhanced chemical vapor deposition (ECR‐PECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of O 2 /dielthylzinc ratio and applied bias voltage. Applying –600 V bias voltage on the substrate during deposition can reduce the sheet resistance by a magnitude of 10 4 without deteriorating the optical transmittance. The optical band gap was increased from 3.36 to 3.54 eV with bias voltage increase. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)