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Thickness scaling of space‐charge‐limited currents in organic layers with field‐ or density‐dependent mobility
Author(s) -
Bisquert Juan,
Montero José M.,
Bolink Henk J.,
Barea Eva M.,
GarciaBelmonte Germà
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622248
Subject(s) - scaling , field dependence , electron mobility , field (mathematics) , space charge , organic semiconductor , condensed matter physics , charge (physics) , charge carrier density , field effect , semiconductor , materials science , chemistry , physics , optoelectronics , mathematics , magnetic field , quantum mechanics , doping , geometry , electron , pure mathematics
An exact solution is provided for the current density‐voltage ( J – V ) characteristics of space‐charge limited transport of a single carrier in organic layers with field‐dependent mobility of the type μ ( E ) = μ 0 exp ( γ √ E . The general scaling relationship for field‐dependent mobility occurs in terms of the variables JL and V / L . For the density‐dependence of the mobility found in organic field‐effect transistor measurements, the thickness scaling occurs in terms of different variables, J 1/ β L and V / L . The proposed scaling is a useful test for distinguishing field‐ and carrier density‐dependent mobility in disordered organic semiconductors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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