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Measurement of external stress on bulk GaN
Author(s) -
Kim J.,
Baik K.,
Park C.,
Cho S.,
Pearton S. J.,
Ren F.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622165
Subject(s) - materials science , bending , stress (linguistics) , ultimate tensile strength , raman spectroscopy , bent molecular geometry , compressive strength , optoelectronics , gallium nitride , focused ion beam , composite material , optics , ion , chemistry , linguistics , philosophy , physics , layer (electronics) , organic chemistry
We report on the measurement of stress in bulk, free‐standing GaN templates under external bending using micro‐Raman scattering. A 488 nm Ar‐ion laser beam was scanned in a cross‐sectional geometry across the GaN template held under external stress conditions. Our experiment showed that the top half of the bulk GaN was under ∼73 MPa of tensile stress while the bottom half of the GaN template was under 40 MPa of compressive stress when bent by a press screw. This data is very helpful to understand both the optical and mechanical properties of bulk GaN and for calibrating and optimizing GaN‐based pressure sensors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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