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1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiO
Author(s) -
Jia G.,
Kittler M.,
Su Z.,
Yang D.,
Sha J.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622143
Subject(s) - cathodoluminescence , luminescence , materials science , silicon , nanowire , oxide , evaporation , optoelectronics , band gap , thermal , nanotechnology , metallurgy , meteorology , physics , thermodynamics
Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 lines and is supposed to be formed by extended defects within the NWs that are decorated with oxygen. Moreover, luminescence bands are found that are related to Si oxide and/or the interface between Si and Si oxide. In addition, the Si band‐to‐band line and the G center are observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)