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Fabrication of a transparent p–n heterojunction thin film diode composed of p‐CuAlO 2 /n‐ZnO
Author(s) -
Kim DaeSung,
Park TaeJin,
Kim DaeHyun,
Choi SeYoung
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622137
Subject(s) - materials science , heterojunction , optoelectronics , diode , thin film , fabrication , electrode , substrate (aquarium) , nanotechnology , chemistry , medicine , alternative medicine , oceanography , pathology , geology
An all‐oxide transparent p–n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/p‐CuAlO 2 /n‐ZnO/In electrode on the glass substrate. The p‐CuAlO 2 thin film was deposited by e‐beam evaporation, which was annealed by the wet‐oxidation method. The p–n heterojunction thin film diode showed rectifying current–voltage characteristics, dominated in forward bias by the flow of space‐charge‐limited current. The ratio of forward current to the reverse current exceeded 40 within the range of applied voltages of –4.0 to +4.0 V and the turn‐on voltage was 0.3 V. Optical transmission of the diode was about 40% in the visible range. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)