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Effects of growth temperature on exciton lifetime and structural properties of ZnO films on sapphire substrate
Author(s) -
Cho S.,
Kim S. I.,
Kim Y. H.,
Mickevičius J.,
Tamulaitis G.,
Shur M. S.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622129
Subject(s) - photoluminescence , materials science , sapphire , substrate (aquarium) , picosecond , exciton , diffraction , excitation , analytical chemistry (journal) , pulsed laser deposition , spectroscopy , laser , thin film , optoelectronics , chemistry , optics , nanotechnology , condensed matter physics , oceanography , physics , electrical engineering , engineering , chromatography , quantum mechanics , geology
We report on optimization of growth conditions by studying the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition at different growth temperatures. The crystallographic structure and surface morphology were studied by X‐ray diffraction and atomic force microscopy, respectively. The flattest surface was observed in the sample grown at substrate temperature of 500 °C. The optical characterization was performed by steady state and time resolved photoluminescence spectroscopy. Photoluminescence of the samples was studied at low CW excitation and at high‐power‐density pulsed excitation in picosecond domain. Stimulated emission was observed at pulsed excitation. Carrier lifetimes were found to significantly depend on the growth temperature reaching the peak value also in the samples grown at approximately 500 °C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)