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Growth and characterization of bilayer InAs/GaAs quantum dot structures
Author(s) -
Liang B. L.,
Wang Zh. M.,
Mazur Yu. I.,
Strelchuck V. V.,
Salamo G. J.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622106
Subject(s) - quantum dot , bilayer , quantum tunnelling , dislocation , characterization (materials science) , layer (electronics) , materials science , optoelectronics , scanning tunneling microscope , nanotechnology , condensed matter physics , chemistry , physics , membrane , biochemistry
One of the difficulties in understanding energy transfer in bilayer quantum dot structures is the complex role of carrier tunneling. This limitation is due to the fact that, for most studies to date, QDs in each layer have only one confined energy level making it difficult to study resonant tunneling effects. In this work, we have investigated the low growth‐rate technique to produce dislocation‐free very large QDs in the second layer that are characterized by several confined energy levels. The high quality surface morphology and optical behavior of these structures were demonstrated by AFM and PL measurements. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)