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A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon
Author(s) -
Vanhellemont Jan,
De Gryse Olivier,
Clauws Paul
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200622048
Subject(s) - silicon , supersaturation , stacking , oxide , nucleus , materials science , silicon oxide , thermal , crystalline silicon , crystallographic defect , chemical physics , condensed matter physics , crystallography , chemistry , thermodynamics , physics , metallurgy , organic chemistry , biology , microbiology and biotechnology , silicon nitride
The formation of stacking faults (SF) at incoherent precipitates is modelled assuming that the SF formation is triggered by a sudden release of strain accumulated in the precipitate during its thermal history. This strain release occurs by emission of intrinsic point defects and leads to a high local supersaturation of intrinsic point defects that condense into a circular SF nucleus by the Bardeen–Herring mechanism. Expressions are derived allowing to calculate the critical precipitate size leading to SF formation as well as the size of the associated SF nucleus. The theoretical results are illustrated for silicon oxide precipitates in silicon and compared with experimental data. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)