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Morphology, interface polarity and branching of electrochemically etched pores in InP
Author(s) -
Spiecker E.,
Rudel M.,
Jäger W.,
Leisner M.,
Föll H.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200590022
Subject(s) - materials science , morphology (biology) , transmission electron microscopy , etching (microfabrication) , crystallography , optics , nanotechnology , chemistry , geology , layer (electronics) , physics , paleontology
The present issue of physica status solidi (a), guest‐edited by Martin Albrecht, has been assembled in honour of Professor Horst P. Strunk, Erlangen, on the occasion of his 65th birthday. The cover picture illustrates the morphology of pores after electrochemical etching of indium phosphide by bright‐field transmission electron micrographs (TEM) under various crystal projections: The upper figures show pore tips imaged in a 〈110〉 projection with pronounced {111}A facets (left image) and short {001} facets edge‐on (right image). The lower left figure contains a pore tip (top right) ending in the TEM specimen and a pore intersecting the specimen, imaged along the 〈111〉 pore axis. Inclined pores in a [001] plan‐view sample imaged under tilted geometry (∼35° tilt) along a 〈112〉 direction are visible in the lower right figure.