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Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation
Author(s) -
Grenzer J.,
Pietsch U.,
Bischoff L.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200590010
Subject(s) - wafer , materials science , reflection (computer programming) , diffraction , nanostructure , ion beam , ion implantation , optics , reciprocal lattice , optoelectronics , semiconductor , beam (structure) , strain (injury) , ion , nanotechnology , physics , computer science , programming language , medicine , quantum mechanics
The cover picture of the present issue of physica status solidi (a) shows a reciprocal space map of the strain sensitive Si(400) reflection from a lateral nanostructure with a period of 550 nm, produced by a focused Ge ion beam. Nominal implantation was along K = 0; the dotted line shows that the true implantation direction was about 3 degrees off. The first author, Jörg Grenzer, is now at the Research Center Rossendorf. His main working field is semiconductor nanostructures, particularly the investigation of strain phenomena which can be exploited in device related structures.