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High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)
Author(s) -
Kuball M.,
Pomeroy J. W.,
Rajasingam S.,
Sarua A.,
Uren M. J.,
Martin T.,
Lell A.,
Härle V.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200590008
Subject(s) - materials science , optoelectronics , raman spectroscopy , substrate (aquarium) , fabrication , heterojunction , transistor , characterization (materials science) , nitride , nanotechnology , optics , electrical engineering , physics , engineering , layer (electronics) , medicine , oceanography , alternative medicine , pathology , voltage , geology
The cover picture of the present issue of physica status solidi (a) is a temperature map of a AlGaN/GaN heterostructure field effect transistor (HFET) obtained using micro‐Raman spectroscopy. The inset shows a photograph of the device with source (S), gate (G) and drain (D) positions marked. The paper by M. Kuball et al. [1] is an invited presentation from the International Workshop on Nitride Semiconductors (IWN 2004). In the Rapid Research Letter by B. Lamprecht et al. [2] the authors report on the successful fabrication and characterization of working organic photodiodes deposited on ordinary newspaper sheets as an example for a flexible and very rough substrate with unfortunate mechanical properties.