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Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes
Author(s) -
Schwarz Ulrich T.,
Pindl Markus,
Sturm Evi,
Furitsch Michael,
Leber Andreas,
Miller Stephan,
Lell Alfred,
Härle Volker
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200590003
Subject(s) - diode , optics , laser , semiconductor laser theory , materials science , optoelectronics , longitudinal mode , physics
As a contribution to the current intense research efforts on wide band‐gap semiconductor devices which are directed towards the development of commercial blue laser diodes, in this issue's Editor's Choice the optimization of the waveguide structure, to achieve stable laser mode operation, is investigated. The cover picture shows the near‐field intensity distribution of the fundamental and first order lateral modes of a blue (Al,In)GaN laser diode together with the double longitudinal mode comb associated with these modes. The first author, Ulrich T. Schwarz, works on optical spectroscopy, characterization, and simulation of blue laser diodes and LEDs. Apart from semiconductor optoelectronics, the focus of his scientific interest is on modern optics, covering propagation invariant Bessel beams, Ince‐Gaussian beams and optical vortices.